Oxydation, fluage et fissuration lente, sous air et sous gaz brûlés, d'un nitrure de silicium élaboré par frittage naturel = Oxidation, creep and slow crack growth, in air or in exhaust gases, of a sintered silicon nitrideFournel, Bénoit; Boussuge, Michel.1991, 115 p.Thesis

Influence des condition d'élaboration sur la microstructure et les propriétés mécaniques du nitrure de silicium = The influence of processing parameters on the microstructure and mechanical properties of silicon nitrideOlagnon, Christian; Fantozzi, Gilbert.1990, 138 p.Thesis

Polyimide adhesion: mechanical and surface analytical characterizationNARECHANIA, R. G; BRUCE, J. A; FRIDMANN, S. A et al.Journal of the Electrochemical Society. 1985, Vol 132, Num 11, pp 2700-2705, issn 0013-4651Article

Breakdown and conduction phenomena in MIS structuresLIM, K. J; KIM, M. N; CHAE, H. I et al.IEEE transactions on electrical insulation. 1992, Vol 27, Num 3, pp 623-628, issn 0018-9367Conference Paper

Application of development-free vapor photolithography in etching silicon nitrideXIAOYIN HONG; SHENGQUAN DUAN; JIANPING LU et al.SPIE proceedings series. 1998, pp 478-486, isbn 0-8194-2776-4Conference Paper

Processing of concentrated aqueous Si₃N₄ slips stabilized with tetramethylammonium hydroxideALBANO, M. P; GARRIDO, L. B.Journal of materials engineering and performance. 1999, Vol 8, Num 2, pp 184-189, issn 1059-9495Article

A novel method for determining the strength of PECVD silicon (oxy)nitride filmsOGBUJI, L. U. J. T; HARDING, D. R.Thin solid films. 1995, Vol 263, Num 2, pp 194-197, issn 0040-6090Article

Properties of silicon nitride films prepared by magnetron sputteringHIROHATA, Y; SHIMAMOTO, N; HINO, T et al.Thin solid films. 1994, Vol 253, Num 1-2, pp 425-429, issn 0040-6090Conference Paper

Deterministic micro asperities on bearings and seals using a modified LIGA processSTEPHENS, L. S; SIRIPURAM, R; HAYDEN, M et al.Journal of engineering for gas turbines and power. 2004, Vol 126, Num 1, pp 147-154, issn 0742-4795, 8 p.Conference Paper

On the nature of the paramagnetic defects in hydrogenated amorphous silicon nitrideCHEN, D. Q; VINER, J. M; TAYLOR, P. C et al.Solid state communications. 1996, Vol 98, Num 8, pp 745-750, issn 0038-1098Article

Self-joining of Si₃N₄ using metal interlayersLEMUS-RUIZ, José; LEON-PATINO, Carlos A; DREW, Robin A. L et al.Metallurgical and materials transactions. A, Physical metallurgy and materials science. 2006, Vol 37, Num 1, pp 69-75, issn 1073-5623, 7 p.Conference Paper

Atomic scale friction and wear of micaHU, J; XIAO, X.-D; OGLETREE, D. F et al.Surface science. 1995, Vol 327, Num 3, pp 358-370, issn 0039-6028Article

Isotopic studies of oxidation of Si₃N₄ and Si using SIMSHONGHUA DU; HOUSER, C. A; TRESSLER, R. E et al.Journal of the Electrochemical Society. 1990, Vol 137, Num 2, pp 741-742, issn 0013-4651, 2 p.Article

Properties of isostatically hot-pressed silicon nitrideRICHERSON, D. W; WIMMER, J. M.Journal of the American Ceramic Society. 1983, Vol 66, Num 9, pp C173-C176, issn 0002-7820Article

Statistical strength evaluation of bot-pressed Si₃N₄GOVILA, R. K.American Ceramic Society bulletin. 1983, Vol 62, Num 11, pp 1251-1258, issn 0002-7812, 6 p.Article

ELECTRICAL PROPERTIES AND THEIR THERMAL STABILITY FOR SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED DEPOSITIONMAEDA M; ARITA Y.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 10; PP. 6852-6856; BIBL. 13 REF.Article

THE GROWTH OF ALPHA - AND BETA -SI₃ N₄ ACCOMPANYING THE NITRIDING OF SILICON POWDER COMPACTSLONGLAND P; MOULSON AJ.1978; J. MATER. SCI.; GBR; DA. 1978; VOL. 13; NO 10; PP. 2279-2280; BIBL. 12 REF.Article

CREEP DEFORMATION OF REACTION-SINTERED SILICON NITRIDESSALAH UD DIN; NICHOLSSON PS.1975; J. AMER. CERAM. SOC.; U.S.A.; DA. 1975; VOL. 58; NO 11-12; PP. 500-502; BIBL. 15 REF.Article

OXIDATION RESISTANT SI-IMPREGNATED SURFACE LAYER OF REACTION SINTERED NITRIDE ARTICLESINOMATA Y.1975; J. CERAM. SOC. JAP.; JAP.; DA. 1975; VOL. 83; NO 1; PP. 1-3; ABS. JAP.; BIBL. 10 REF.Article

SILICON NITRIDE FILMS BY DIRECT RF SPUTTER DEPOSITION.KOMINIAK GJ.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 9; PP. 1271-1273; BIBL. 58 REF.Article

SYNTHESE ET PROPRIETES DES COUCHES DIELECTRIQUES DE SI₃N₄MYAKINENKOV VI; NOGIN VM; ANOKHIN BG et al.1974; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1974; VOL. 10; NO 11; PP. 1967-1971; BIBL. 18 REF.Article

Silicon nitrideAULT, N. N; YECKLEY, R. L.American Ceramic Society bulletin. 1992, Vol 71, Num 5, issn 0002-7812, p. 816Article

Silicon nitrideAULT, N. N.American Ceramic Society bulletin. 1991, Vol 70, Num 5, pp 882-883, issn 0002-7812, 2 p.Article

Métallisation de céramiques de nitrure de siliciumSAYANO, A; TANAKA, S.-I; IKEDA, K et al.Yogyo kyokaishi. 1986, Vol 94, Num 1, pp 108-110, issn 0009-0255Article

The role of Si₃N₄ additions in the reaction bonding of silicon compactsGREGORY, O. J; RICHMAN, M. H.Journal of materials science letters. 1984, Vol 3, Num 2, pp 112-116, issn 0261-8028Article